[G-8] Ferroelectric Material and Process

[G-8-03] A Comprehensive Study on the Ferroelectric HfO₂-ZrO₂-HfO₂ and ZrO₂-HfO₂-ZrO₂ Nanolaminates

〇Kaixuan Li¹, Yue Peng¹, Wenwu Xiao², Yan Liu¹, Genquan Han^1,3, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University (China), 2. Xi’an UniIC Semiconductors Company Ltd. (China), 3. Hangzhou Institute of Technology, Xidian University (China))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-8-03

In this paper, the effect of starting layer on the ferroelectric properties and reliability of Zr-doped HfO2 ferroelectric (FE) thin films was studied. The HfO2-ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) nanolaminates metal-FE-metal (MFM) capacitors were fabricated. Compared with the ZHZ device, a higher value of 2Pr for the HZH device was achieved. However, the ZHZ structure shows a better wake-up performance and frequency stability than HZH, which is due to the HfO2 initial layer introduces more oxygen into FE film than ZrO2 during FE film deposition. The study is helpful for understanding and optimizing the HfO2-based FE films for non-volatile memory applications.