2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

01: Advanced CMOS: Material Fundamentals / Process Science / Device Physics

[G-8] Ferroelectric Material and Process

Thu. Sep 29, 2022 10:45 AM - 11:45 AM 301 (3F)

Session Chair: Tsuda Shibun (Renesas Electronics Corp.), Genji Nakamura (Tokyo Electron Ltd.)

11:30 AM - 11:45 AM

[G-8-04] Improved Ferroelectric Memory Characteristics by Using TiNx in Novel Ru/TiNx/Hf0.5Zr0.5O2/TiN Capacitor

〇Asim Senapati1, Siddheswar Maikap1,2, Chen- Ying Lin3, Chun- Yu Liao3, Min- Hung Lee3 (1. Chang Gung University (CGU) (Taiwan), 2. Keelung Chang Gung Memorial Hospital (CGMH) (Taiwan), 3. National Taiwan Normal University (NTNU) (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-8-04

A thin TiNx layer in novel Ru/TiNx/Hf0.5Zr0.5O2/TiN capacitor shows improved 2Pr value of 14.5%, 22.4 µC/cm2 after 1010 cycles, and 27.1 µC/cm2 after 10 years retention with respect to without TiNx in Ru/Hf0.5Zr0.5O2/TiN. This is owing to higher ratio of o-phase from HRTEM, higher permittivity, and TiNx consumes limited oxygen to have lower barrier height by F-N tunneling.

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