[G-8] Ferroelectric Material and Process

[G-8-04] Improved Ferroelectric Memory Characteristics by Using TiN_x in Novel Ru/TiN_x/Hf_0.5Zr_0.5O₂/TiN Capacitor

〇Asim Senapati¹, Siddheswar Maikap^1,2, Chen- Ying Lin³, Chun- Yu Liao³, Min- Hung Lee³ (1. Chang Gung University (CGU) (Taiwan), 2. Keelung Chang Gung Memorial Hospital (CGMH) (Taiwan), 3. National Taiwan Normal University (NTNU) (Taiwan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.G-8-04

A thin TiNx layer in novel Ru/TiNx/Hf0.5Zr0.5O2/TiN capacitor shows improved 2Pr value of 14.5%, 22.4 µC/cm2 after 1010 cycles, and 27.1 µC/cm2 after 10 years retention with respect to without TiNx in Ru/Hf0.5Zr0.5O2/TiN. This is owing to higher ratio of o-phase from HRTEM, higher permittivity, and TiNx consumes limited oxygen to have lower barrier height by F-N tunneling.