[H-1] Characterization I: Low Dimensional Devices and Materials

[H-1-02] Atomistic Modeling of Electronic Structure of Disordered InP Quantum Dots

〇Jin Hyong Lim¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-1-02

The electronic structures of disordered InP quantum dots (QDs) are investigated using an empirical tight-binding (TB) method. The bandgaps of InP QDs with different shapes and sizes are computed, and the effect of surface roughness on the bandgap is investigated. The relationship between the bandgap changes and the modulus squared of the wavefunction is also discussed.