[H-1] Characterization I: Low Dimensional Devices and Materials

[H-1-04] Piezoelectricity of the hBN/1L-MoS₂ heterostructure membrane

Calvin Chiba¹, Shota Sugawara¹, Emi Kitayoshi¹, Kenji Watanabe², Takashi Taniguchi², Kentarou Sawano¹, Hiroyuki Fujita¹, 〇Yusuke Hoshi¹ (1. Tokyo City Univ. (Japan), 2. NIMS (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-1-04

We investigate the piezoelectricity of the hBN/1L-MoS2 van der Waals heterostructure membrane on the microtrench cavity. It is demonstrated that the 1L-MoS2 can be pulled together with the multilayered hBN by the back-gate bias tuning due to the Coulomb interaction. Furthermore, we show the response of the piezoelectric voltage generated between graphite source-drain electrodes under the cyclical DC back-gate voltage.