[H-2] Novel Function Devices

[H-2-02] An Ultra-low-voltage Synaptic Behavior of WO₃/Pd based 2-terminal Protonic Memristive Device

〇Satya Prakash Pati¹, Satoshi Hamasuna¹, Takeaki Yajima¹ (1. Kyushu University (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-2-02

Memristive devices are basic building blocks for de-signing memory and logic circuits. Conventional resis-tive switching by ion transport in solid state devices suf-fers from poor reproducibility and high-power con-sumption. Herein, we demonstrate a simple two terminal protonic solid-state device which rely on electrochemical change of conductance state. This alternative synaptic device comprising of a WO3 conducting channel and a Pd reservoir. Electric field control of protonation and deprotonation results in conductance change in WO3 over several orders of magnitude. Moreover, protons being smallest ion and their barrier free motion in this device structure offers low energy switching of con-ductance state for ultra-low power consumption neuro-morphic computing.