[H-2] Novel Function Devices

[H-2-05] Electron temperature in semiconductor double barrier thermionic cooling heterostructures

〇Xiangyu Zhu¹, Marc Bescond^1,2, Gerald Bastard³, Naomi Nagai¹, Kazuhiko Hirakawa^1,2,4 (1. IIS, Univ. of Tokyo (Japan), 2. LIMMS-CNRS, Univ. of Tokyo (Japan), 3. ENS PSL (France), 4. INQIE, Univ. of Tokyo (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-2-05

We investigate electron transport in asymmetric double-barrier (Al, Ga)As/GaAs thermionic cooling heterostructures. To establish quantitative understanding, we develop an intuitive analytical model for sequential electron transport and energy balance in the two-dimensional quantum well (QW). The electron temperature in the QW is calculated and compared with the results obtained from voltage-dependent photoluminescence measurements.