[H-2] Novel Function Devices

[H-2-06] Low Temperature Operation of 2DHG Diamond FETs with Superconducting Diamond Sources and Drains aiming at JoFET or SCFET operation

〇Chiyuki Wakabayashi¹, Yasuhiro Takahashi¹, Taisuke Kageura², Yoshihiko Takano³, Minoru Tachiki³, Shuuichi Ooi³, Shunichi Arisawa³, Hiroshi Kawarada^1,4 (1. Waseda Univ. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 3. MANA National Inst. for Materials Science (Japan), 4. The Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-2-06

We fabricated Diamond FETs with two-dimensional hole gas (2DHG) diamond channels and superconducting boron-doped diamond sources and drains aiming at JoFET or SCFET operation. The channel was miniaturized down to 200 nm. As a result, FETs were operated in cryogenic environments down to 1.6 K.