2022 International Conference on Solid State Devices and Materials

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Oral Presentation

08: Low Dimensional Devices and Materials

[H-3] Characterization II: Low Dimensional Devices and Materials

Tue. Sep 27, 2022 4:15 PM - 6:00 PM 302 (3F)

Session Chair: Toshifumi Irisawa (AIST), Fumitaro Ishikawa (Hokkaido Univ.)

4:45 PM - 5:00 PM

[H-3-03] Thickness-Dependent Magnetic Domain Structures in CoFe/MgO Nanolayer Patterns on GaAs (001) Substrates

〇Li Zi1, Wei Dai1, Masashi Akabori2, Shinjiro Hara1 (1. Hokkaido Univ. (Japan), 2. Japan Advanced Inst. of Sci. and Tech. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-3-03

We characterize the magnetic domains in CoFe/MgO nanolayer patterns deposited on GaAs (001) substrate for a different nanolayer thickness by magnetic force microscopy without an external magnetic field at room temperature. The results show that thickness of the nanolayer patterns and crystallographic orientation of the substrate are still key factors for controlling magnetic domain structures. In addition, the MgO film also plays an important role in adjusting domain structures.

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