2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

08: Low Dimensional Devices and Materials

[H-4] Device Application I: Low Dimensional Devices and Materials

Wed. Sep 28, 2022 9:00 AM - 10:00 AM 302 (3F)

Session Chair: Takamasa Kawanago (Tokyo Tech), Takayuki Arie (Osaka Metropolitan Univ.)

9:00 AM - 9:15 AM

[H-4-01] Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

〇Jiang Pu1, Naoki Wada2, Yuhei Takaguchi2, Wenjin Zhang3, Zheng Liu4, Takahiko Endo2, Toshifumi Irisawa4, Kazunari Matsuda3, Yuhei Miyauchi3, Yasumitsu Miyata2, Taishi Takenobu1 (1. Nagoya Univ. (Japan), 2. Tokyo Metropolitan Univ. (Japan), 3. Kyoto Univ. (Japan), 4. AIST (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.H-4-01

This study demonstrated interfacial electrolumines-cence (EL) in diverse transition metal dichalcogenide (TMDC) in-plane heterostructures. Various combina-tions of single-crystalline in-plane heterostructures with sharp interfaces were grown by chemical vapor deposition (CVD), followed by adopting electro-lyte-based light-emitting devices (LEDs) to observe EL. The fine heterostructures enabled the capture of the linear-shaped EL fixed along the junction interfaces. Significantly, the WS2/WSe2 in-plane heterostructures exhibited circularly polarized EL with a polarizability of 10% at room temperature. These findings pave the way for monolayer in-plane heterostructures to use in functional optoelectronic devices.

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