[H-4] Device Application I: Low Dimensional Devices and Materials

[H-4-01] Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers

〇Jiang Pu¹, Naoki Wada², Yuhei Takaguchi², Wenjin Zhang³, Zheng Liu⁴, Takahiko Endo², Toshifumi Irisawa⁴, Kazunari Matsuda³, Yuhei Miyauchi³, Yasumitsu Miyata², Taishi Takenobu¹ (1. Nagoya Univ. (Japan), 2. Tokyo Metropolitan Univ. (Japan), 3. Kyoto Univ. (Japan), 4. AIST (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.H-4-01

This study demonstrated interfacial electrolumines-cence (EL) in diverse transition metal dichalcogenide (TMDC) in-plane heterostructures. Various combina-tions of single-crystalline in-plane heterostructures with sharp interfaces were grown by chemical vapor deposition (CVD), followed by adopting electro-lyte-based light-emitting devices (LEDs) to observe EL. The fine heterostructures enabled the capture of the linear-shaped EL fixed along the junction interfaces. Significantly, the WS2/WSe2 in-plane heterostructures exhibited circularly polarized EL with a polarizability of 10% at room temperature. These findings pave the way for monolayer in-plane heterostructures to use in functional optoelectronic devices.