2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

08: Low Dimensional Devices and Materials

[H-5] Device Application II: Low Dimensional Devices and Materials

2022年9月28日(水) 10:45 〜 11:45 302 (3F)

Session Chair: Shu Nakaharai (NIMS), Takeshi Yanagida (Univ. of Tokyo)

11:15 〜 11:30

[H-5-02] Continuous Color-Tunable Light-Emitting Devices Based on Compositionally Graded Monolayer Transition Metal Dichalcogenide Alloys

〇Hao Ou1, Jiang Pu1, Tomoyuki Yamada1, Naoki Wada2, Hibiki Naito2, Zheng Liu3, Toshifumi Irisawa4, Yusuke Nakanishi2, Yasumitsu Miyata2, Taishi Takenobu1 (1. Nagoya Univ. (Japan), 2. Tokyo Metropolitan Univ. (Japan), 3. AIST (Japan), 4. AIST (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.H-5-02

A color-tunable light-emitting device using composi-tionally graded monolayer transition metal dichalco-genide alloy was fabricated. The monolayer WS2/WSe2 alloy was grown by chemical vapor deposition and showed bandgap variation from 2.1 eV to 1.7 eV, from WS2-rich side to WSe2-rich side. By using electro-lyte-based light-emitting device structure, the recombi-nation zone of the device could be tuned laterally. With the graded composition inside the channel region, the light-emitting device exhibited continuous and reversi-ble color tunability when emitting light at different voltages. Our results provide a new approach for the exploration of broadband optoelectronics based on monolayer semiconductors.

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