[H-6] Growth and Synthesis: Low Dimensional Devices and Materials

[H-6-02] Control of the 3D SML Nanostructure Density by Topmost InAs Cycle Amount

〇Ronel Christian Roca¹, Itaru Kamiya¹ (1. Toyota Tech. Inst. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.H-6-02

A wide control of the 3D SML nanostructure density in 10-stack SML nanostructures by varying the amount of InAs in the topmost and last cycle is demonstrated. By keeping the first 9 InAs SML cycles at 0.4 ML and only changing the last cycle from 0.5 to 0.9 ML, fine control across the transition from 2D to 3D SML growth regime can be realized. By uti-lizing this method, a high degree of control of the 3D SML nanostructure density is achieved, allowing for application specific density engineering of the SML nanostructures.