2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

08: Low Dimensional Devices and Materials

[H-6] Growth and Synthesis: Low Dimensional Devices and Materials

2022年9月28日(水) 13:30 〜 15:00 302 (3F)

Session Chair: Reina Kaji (Hokkaido Univ.), Shengnan Wang (NTT Basic Research Laboratories)

14:00 〜 14:15

[H-6-02] Control of the 3D SML Nanostructure Density by Topmost InAs Cycle Amount

〇Ronel Christian Roca1, Itaru Kamiya1 (1. Toyota Tech. Inst. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.H-6-02

A wide control of the 3D SML nanostructure density in 10-stack SML nanostructures by varying the amount of InAs in the topmost and last cycle is demonstrated. By keeping the first 9 InAs SML cycles at 0.4 ML and only changing the last cycle from 0.5 to 0.9 ML, fine control across the transition from 2D to 3D SML growth regime can be realized. By uti-lizing this method, a high degree of control of the 3D SML nanostructure density is achieved, allowing for application specific density engineering of the SML nanostructures.

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