Near-IR and UV Photon Emissions from SiGe- and C-Quantum-Dots  Fabricated by Hot-Ion Implantation into Si-Oxide Layers

Tomohisa Mizuno

doi:https://doi.org/10.7567/SSDM.2022.H-6-03

Presentation information

Oral Presentation

08: Low Dimensional Devices and Materials

[H-6] Growth and Synthesis: Low Dimensional Devices and Materials

Wed. Sep 28, 2022 1:30 PM - 3:00 PM 302 (3F)

Session Chair: Reina Kaji (Hokkaido Univ.), Shengnan Wang (NTT Basic Research Laboratories)

2:15 PM - 2:30 PM

[H-6-03] Near-IR and UV Photon Emissions from SiGe- and C-Quantum-Dots Fabricated by Hot-Ion Implantation into Si-Oxide Layers

〇Tomohisa Mizuno¹, Kohki Murakawa ¹, Hayato Ban¹, Takashi Aoki¹, Toshiyuki Sameshima² (1. Kanagawa University (Japan), 2. Tokyo Univ. Agri. Tech. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-6-03

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