Near-IR and UV Photon Emissions from SiGe- and C-Quantum-Dots  Fabricated by Hot-Ion Implantation into Si-Oxide Layers

Tomohisa Mizuno

doi:https://doi.org/10.7567/SSDM.2022.H-6-03

講演情報

Oral Presentation

08: Low Dimensional Devices and Materials

[H-6] Growth and Synthesis: Low Dimensional Devices and Materials

2022年9月28日(水) 13:30 〜 15:00 302 (3F)

Session Chair: Reina Kaji (Hokkaido Univ.), Shengnan Wang (NTT Basic Research Laboratories)

14:15 〜 14:30

[H-6-03] Near-IR and UV Photon Emissions from SiGe- and C-Quantum-Dots Fabricated by Hot-Ion Implantation into Si-Oxide Layers

〇Tomohisa Mizuno¹, Kohki Murakawa ¹, Hayato Ban¹, Takashi Aoki¹, Toshiyuki Sameshima² (1. Kanagawa University (Japan), 2. Tokyo Univ. Agri. Tech. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-6-03

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講演情報

[H-6] Growth and Synthesis: Low Dimensional Devices and Materials

[H-6-03] Near-IR and UV Photon Emissions from SiGe- and C-Quantum-Dots Fabricated by Hot-Ion Implantation into Si-Oxide Layers

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