[H-6] Growth and Synthesis: Low Dimensional Devices and Materials

[H-6-04] Chemical Properties of a PVD-ZrS₂ Film Underneath Scaled-High-k/IL-ZrO₂ Insulator Systems

〇Masaki Otomo¹, Masaya Hamada¹, Ryo Ono¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1. Tokyo Inst. of Tech. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.H-6-04

A ZrS2 film, which is a 2D-TMDC, stabilizes in air with a zirconium oxide film, which functions as a high-k interfacial layer. We fabricated high-k/PVD-ZrS2 stacks by introducing self-oxidized ZrO2 and analyzed their chemical properties. The results clarified that sulfur-vapor annealing (SVA) is essential for fabricating high-quality ZrS2 films by PVD and that the change in surface potential of the ZrS2 film due to interface dipoles between the high-k and ZrO2 films is suppressed with scaling of the high-k film thickness. In addition, SVA through the high-k film enhanced the quality of the ZrS2 film without affecting the surface potential, possibly enabling control of the threshold voltage in a ZrS2 MISFET.