[H-6] Growth and Synthesis: Low Dimensional Devices and Materials

[H-6-05] Electromigration at nanocontacts of metal species of high-melting temperatures

〇Yue Tian¹, Shaoqing Du^1,2, Kazuhiko Hirakawa^1,3 (1. Inst. of Indus Sci., Univ. of Tokyo (Japan), 2. Shanghai inst. of microsystem and info. Tech. (China), 3. Inst. for Quantum Info. Electronics, Univ. of Tokyo (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.H-6-05

We have investigated elementary processes of electromi-gration (EM) at Ni nanocontacts and observed that they are very different from those for Au nanocontacts. The critical voltage for EM, where metal atoms are removed by electri-cal stress, show a value determined by the surface diffusion potential of the metal and they do not show a dependence expected for Joule heating. We propose a model thata a very small fraction of electrons fly ballistically over the nanocontact region and transfer their kinetic energy to met-al atoms. The proposed model reasonably explains the lat-tice temperature dependence.