[H-8] Device Application III: Low Dimensional Devices and Materials

[H-8-02] Ohmic current injection into single-crystal carbon-doped h-BN toward two-dimensional power device application

〇Supawan Ngamprapawat¹, Tomonori Nishimura¹, Kenji Watanabe², Takashi Taniguchi², Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan), 2. NIMS (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.H-8-02

Current injection into two types of C-doped single-crystal h-BN prepared by in-situ C doping and C diffusion was investigated. The in-situ C-doped h-BN with a higher C density shows an ohmic conduction, while the C-diffused h-BN exhibits a nonohmic conduction. Both current injections show totally different behavior from the transverse dielectric breakdown. The detailed analysis suggests that the dominant mechanism for current injection in the in-situ C-doped and C-diffused h-BN is tunneling through defect states and tunneling-assisted Poole-Frenkel (PF) conduction, respectively.