Shockley–Read–Hall Lifetime in p-type Distributed-Polarization Doped AlGaN Estimated from Current–Voltage Characteristics of p-n<sup>+</sup> Diode

Takeru Kumabe

doi:https://doi.org/10.7567/SSDM.2022.J-1-01

11:30 AM - 11:45 AM

[J-1-01] Shockley–Read–Hall Lifetime in p-type Distributed-Polarization Doped AlGaN Estimated from Current–Voltage Characteristics of p-n⁺ Diode

〇Takeru Kumabe¹, Hirotaka Watanabe², Yoshio Honda², Hiroshi Amano^2,3,4 (1. Dept. of Electronics Nagoya Univ. (Japan), 2. IMaSS Nagoya Univ. (Japan), 3. VBL Nagoya Univ. (Japan), 4. ARC Nagoya Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-1-01

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Presentation information

[J-1] Advanced Technologies for GaN Devices

[J-1-01] Shockley–Read–Hall Lifetime in p-type Distributed-Polarization Doped AlGaN Estimated from Current–Voltage Characteristics of p-n⁺ Diode

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Presentation information

[J-1] Advanced Technologies for GaN Devices

[J-1-01] Shockley–Read–Hall Lifetime in p-type Distributed-Polarization Doped AlGaN Estimated from Current–Voltage Characteristics of p-n+ Diode

Password

[J-1-01] Shockley–Read–Hall Lifetime in p-type Distributed-Polarization Doped AlGaN Estimated from Current–Voltage Characteristics of p-n⁺ Diode