[J-1] Advanced Technologies for GaN Devices

[J-1-02] Characterization of Magnesium Channeled Implantation Layers in GaN(0001)

〇Atsushi Suyama^1,2, Hitoshi Kawanowa², Hideaki Minagawa², Junko Maekawa², Shinji Nagamachi², Masahiko Aoki², Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Ion Technology Center Co., Ltd. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-1-02

Effect of channeled implantation of 20keV Mg+ ions to GaN(0001) has been studied systematically in the ion dose range of 1.0 ~ 10 × 1014 cm-2. P-type conduction in the layer implanted with 1.0 × 1014 ions/cm2 and N2-annealed at 1300ºC is confirmed by Hall effect and photoluminescence (PL) measurements although the generation of N vacancies and several types of defects are verified by PL and Scanning-TEM (STEM) observations. Rutherford backscattering spectroscopy (RBS) spectra obtained from the implanted layers after the activation anneal show crystalline quality with χmin values of 3.5 ~ 4.5% except highly-defective surfaces. These results indicate that channeled implantation leads to a promising doping technique for GaN devices.