2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-1] Advanced Technologies for GaN Devices

Tue. Sep 27, 2022 11:30 AM - 12:30 PM 303 (3F)

Session Chair: Shinsuke Harada (AIST), Hiroshi Kawarada (Waseda Univ.)

12:00 PM - 12:15 PM

[J-1-03] Effect of Atomic Layer Etching using Nitrogen Plasma on Hall Accumulation at MIS Interface of GaN Polarization-Junction Substrate

〇Takuya Hoshii1, Shonosuke Kimura1, Kuniyuki Kakushima1, Hitoshi Wakabayashi1, Kazuo Tsutsui1 (1. Tokyo Tech (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-1-03

Atomic layer etching (ALE) is a promising process for fabricating recessed-gate GaN devices with superior MIS interfaces. In this study, nitrogen-plasma ALE was applied for the p-channel GaN MISFETs, and the resulting drive current improvement was verified. This improvement indicates a contribution of hole accumulation at the MIS interface. Also, XPS for the MIS interfaces revealed that ALE using nitrogen plasma could reduce the Ga oxides, which would be attributed to the suppression of nitrogen desorption from GaN surfaces during etching and resulting in superior MIS properties. Therefore, nitrogen-plasma ALE could be a novel technique to improve the performance of p-channel GaN MISFETs.

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