[J-1] Advanced Technologies for GaN Devices

[J-1-04] Tight-Binding Analysis of the Effect of Strain on the Band Structure of GaN

〇Wataru Miyazaki¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-1-04

The effects of strain on the band structure of GaN are
investigated by using an empirical tight-binding method.
The impacts on its bandgap, carrier effective mass, and
group velocity are discussed. The strain suitable for
achieving high breakdown voltage is proposed.