Advanced GaN HEMTs for high-efficiency and high-frequency power amplifiers

Yusuke Kumazaki

doi:https://doi.org/10.7567/SSDM.2022.J-2-01

講演情報

Oral Presentation

04: Power / High-speed Devices and Materials

[J-2] GaN-based High-speed Devices

2022年9月27日(火) 14:00 〜 15:30 303 (3F)

Session Chair: Taketomo Sato (Hokkaido Univ.), Naotaka Iwata (Toyota Technological Inst.)

14:00 〜 14:30

[J-2-01 (Invited)] Advanced GaN HEMTs for high-efficiency and high-frequency power amplifiers

〇Yusuke Kumazaki¹, Shiro Ozaki¹, Yuichi Minoura¹, Atsushi Yamada¹, Naoya Okamoto¹, Naoki Hara¹, Yasuhiro Nakasha¹, Junji Kotani¹, Masaru Sato¹, Toshihiro Ohki¹ (1. Fujitsu Ltd. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-2-01

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講演情報

[J-2] GaN-based High-speed Devices

[J-2-01 (Invited)] Advanced GaN HEMTs for high-efficiency and high-frequency power amplifiers

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