[J-2] GaN-based High-speed Devices

[J-2-02] Steep Slope GaN MOS-HEMTs with Ferroelectric Semiconductor Heterostructure

〇Jeong Yong Yang¹, Min Jae Yeom¹, Seok Chan Yoon¹, Yeong Je Jeong¹, Chan Ho Lee¹, Sang Hee Kim¹, Seung Yoon Oh¹, GeonWook Yoo¹ (1. Univ. Soongsil (Korea))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-2-02

We demonstrate a steep subthreshold slope (SS) (12 mV/dec) AlGaN/GaN MOS-HEMT by integrating an α-In2Se3 ferroelectric semiconductor as a gate layer. The ferroelectric polarization and semiconductor characteristics of two-dimensional α-In2Se3 is a promising candidate ferroelectric material for modulating the 2DEG channel. The self-aligned α-In2Se3 etching process optimizes device's performance by concentrating its ferroelectric polarization in vertical directions. Furthermore, the reduction of carrier distribution after the etching process enables an achieving the high on/off ratio in a short channel structure. The device with superior characteristics can be a utilizing for GaN-based fast logic and reconfigurable device applications.