[J-2] GaN-based High-speed Devices

[J-2-03] GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers

〇Yoshikaze Ito¹, Seita Tamai¹, Takuya Hoshi², Yasuyuki Miyamoto¹ (1. Tokyo Institute of Technology (Japan), 2. NTT Device Technology Laboratories, NTT Corporation (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-2-03

AlGaN/GaN HEMTs with 65 nm channel and 38 nm channel with back barrier layers were fabricated. The isolation process caused damage related to the thickness of the channel layer, possibly due to the surface oxidation, resulting in deteriorated characteristics such as sheet re-sistance and transconductance. Although the suppression of the short-channel effect by the back-barrier layer was confirmed, no significant property change due to the channel layer thickness was observed in the range of fab-ricated gate length.