2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

04: Power / High-speed Devices and Materials

[J-2] GaN-based High-speed Devices

2022年9月27日(火) 14:00 〜 15:30 303 (3F)

Session Chair: Taketomo Sato (Hokkaido Univ.), Naotaka Iwata (Toyota Technological Inst.)

15:00 〜 15:15

[J-2-04] Self-terminating Photo-electrochemical (PEC) Etching for Recessed-gate Fabrication on AlGaN/GaN HEMTs

〇Takuya Togashi1, Kosaku Ito1, Taketomo Sato1 (1. Hokkaido Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-2-04

The controllability of photo-electrochemical (PEC) etching was investigated for the fabrication of recessed-gate AlGaN/GaN HEMTs. The self-termination depth of the PEC etching was strongly dependent on the light power intensity, showing that the photovoltaic effect of the electrolyte/AlGaN system is the driving force for PEC etching.

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