[J-2] GaN-based High-speed Devices

[J-2-05] Depletion width in AlGaN/GaN heterostructures under Ohmic-metals

〇Kazuya Uryu^1,2, Toshi-kazu Suzuki¹ (1. Japan Advanced Inst. of Sci. and Tech. (Japan), 2. Advantest Lab. Ltd. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-2-05

For AlGaN/GaN heterostructures with Ohmic-metals, we determined the depletion width under the Ohmic-metals, by using multi-probe-Hall measurements in combination with high-frequency characterization of floating contacts.