2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

04: Power / High-speed Devices and Materials

[J-2] GaN-based High-speed Devices

2022年9月27日(火) 14:00 〜 15:30 303 (3F)

Session Chair: Taketomo Sato (Hokkaido Univ.), Naotaka Iwata (Toyota Technological Inst.)

15:15 〜 15:30

[J-2-05] Depletion width in AlGaN/GaN heterostructures under Ohmic-metals

〇Kazuya Uryu1,2, Toshi-kazu Suzuki1 (1. Japan Advanced Inst. of Sci. and Tech. (Japan), 2. Advantest Lab. Ltd. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-2-05

For AlGaN/GaN heterostructures with Ohmic-metals, we determined the depletion width under the Ohmic-metals, by using multi-probe-Hall measurements in combination with high-frequency characterization of floating contacts.

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