[J-4] Ultrawide Bandgap Semiconductor Devices

[J-4-03] 2DHG diamond MOSFETs with multi-finger structure for gate width expansion and improved RF characteristics

〇Akira Takahashi¹, Masakazu Arai¹, Yukiko Suzuki¹, Fuga Asai¹, Atsushi Hiraiwa¹, Masaomi Tsuru³, Yutaro Yamaguchi³, Yuji Komatsuzaki³, Ken Kudara³, Hiroshi Kawarada^1,2 (1. Waseda univ Kawarada lab. (Japan), 2. Kagami Memorial Res. (Japan), 3. Mitsubishi Electric Corp. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-4-03

We have fabricated a high frequency 2DHG diamond
MOSFET with an air-bridge structure to increase the
gate width for further increasing the MOSFET power.
We succeeded in realizing a multi-finger structure with an increased number of gate fingers from the conventional double-finger structure. DC and RF performance of the double-finger devices and multi-finger devices were compared and investigated. As a result, the multi-finger devices did not degrade the current density due to the increase of gate width (WGT), and the maximum oscillation frequency (fmax) was increased by 1.5 times.