2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-5] SiC Processes and Characterizations

Wed. Sep 28, 2022 10:45 AM - 12:00 PM 303 (3F)

Session Chair: Kung-Yen Lee (National Taiwan Univ.), Naoki Watanabe (Hitachi, Ltd.)

10:45 AM - 11:00 AM

[J-5-01] Structural Analysis of Bar-Shaped Single Shockley-Type Stacking Fault near the Substrate/Epilayer Interface and the Epitaxial Surface of 4H-SiC

〇Johji Nishio1, Chiharu Ota1, Ryosuke Iijima1 (1. Corporate R&D Center, Toshiba Corp. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-5-01

Partial dislocation combinations near the substrate/epilayer interface and the epilayer surface of 4H-SiC are analyzed for bar-shaped single Shockley-type stacking faults (1SSFs). Although the partial dislocations are found to have a zigzag structure similar to that found in triangular 1SSF, the combination is thought to be different. The features of the original basal plane dislocation are speculated on.

Abstract password authentication.
Password to download abstracts has been informed in the confirmation mail.

Password