[J-5] SiC Processes and Characterizations

[J-5-05] Doping properties of 4H-SiC using KrF excimer laser ablation with SiNx thin film

〇Takuma - Yasunami¹, Daisuke - Nakamura¹, Keita - Katayama¹, Yoshiaki - kakimoto^1,2, Toshifumi - Kikuchi¹, Hiroshi - Ikenoue^1,2 (1. Univ. of Kyushu (Japan), 2. Department of Gigaphoton NEXT GLP (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-5-05

KrF excimer laser was irradiated to 4H-SiC with an SiNx thin film and nitrogen was doped into 4H-SiC. We investigated the effect of changing the laser fluence and the number of irradiations on the doping properties. At a fluence of 2.5 J/cm², high-concentration doping was achieved while maintaining the surface flatness by solid-phase diffusion, whereas at a fluence of 2.8 J/cm², surface roughness was increased by melt diffusion. By increasing the number of irradiations, the internal diffusion of nitrogen was induced in the deep region while maintaining the surface flatness. Irradiation of 100 or more shots increased the contact resistance, suggesting the formation of defects inside the crystal during the solid-phase diffusion process.