[J-6] Interface Technologies

[J-6-05] Analysis of leakage current mechanisms in NO-nitrided SiC(1-100) MOS devices

〇Asato Suzuki¹, Takato Nakanuma¹, Takuma Kobayashi¹, Mitsuru Sometani², Mitsuo Okamoto², Akitaka Yoshigoe³, Takayoshi Shimura¹, Heiji Watanabe¹ (1. Osaka Univ. (Japan), 2. AIST (Japan), 3. JAEA (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-6-05

Leakage characteristics of NO-nitrided SiC(1-100) MOS devices were investigated. From the current densi-ty-oxide field (Ig-EOX) characteristics at 25°C, we found that the nitridation at 1250°C reduces the conduction band offset (ΔEC) at the SiO2/SiC interface by about 0.3 eV, which was also confirmed by synchrotron radiation XPS (SR-XPS) measurements. The Ig-EOX characteristics near the onset of leakage were reproduced by considering Fowler-Nordheim (FN) and Poole-Frenkel (PF) currents for samples with various nitridation conditions over a wide measurement temperature (25 – 200°C).