2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-6] Interface Technologies

Wed. Sep 28, 2022 1:30 PM - 3:45 PM 303 (3F)

Session Chair: Yuichi Onozawa (Fuji Electric Corp.), Shinsuke Harada (AIST)

2:45 PM - 3:00 PM

[J-6-06] 4H-SiC surface nitridation kinetic model in high temperature N2 (+O2) annealing focusing on the effects of annealing temperature and O2 partial pressure

〇Tianlin Yang1, Koji Kita1,2 (1. Department of Materials Engineering, School of Engineering, Univ. of Tokyo (Japan), 2. Department of Advanced Materials Science, Graduate School of Frontier Sciences, Univ. of Tokyo (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-6-06

An SiC surface nitridation kinetic model was build up
considering the reaction rates of N-incorporation (Nr) and N-removal (k). According to our model, the saturated surface N density (AN) is determined by the ratio Nr/k. Based on this model, the effects of the annealing temperature (T) and O2 partial pressure on the saturated AN for 4H-SiC(0001) were investigated for high-T N2 annealing systematically. Experimentally, the saturated AN was observed to increase with T but decrease with the O2 partial pressure, which is understandable by considering our model.

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