[J-8] Si and SiC Power Devices

[J-8-02] Poly Back Seal Effect on Platinum Solid Phase Diffusion in High Speed Switching Diodes

〇Yuhki Fujino¹, Shotaro Baba¹, Hiroaki Kato¹, Shingo Sato¹, Katsura Miyashita¹ (1. Toshiba Electric Devices & Storage Corp. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-8-02

We evaluated poly back seal (PBS) effect on platinum concentration profile during platinum solid phase diffusion in high speed switching diodes. We confirmed that the platinum concentration in PBS is kept constant and by far higher than that in silicon wafers. We also confirmed that the thicker the PBS, the more platinum is accumulated. It is also confirmed that PBS has no effects on the platinum concentration profile of the front side of the wafer after platinum solid phase diffusion, which is also verified in Qrr measurement.