[J-8] Si and SiC Power Devices

[J-8-04] Experimental and Numerical Investigations of the Electrical Characteristics of SiC SBD-Integrated MOSFETs by Varying the Area Occupied by Embedded SBDs

〇Keisuke Kashiwa¹, Mitsuki Takahashi¹, Hiroshi Yano¹, Noriyuki Iwamuro¹ (1. Univ. of Tsukuba (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-8-04

This study describes the static and dynamic char-acteristics and withstanding capabilities of two types of 1.2-kV SiC SBD-integrated MOSFET, which have different SBD areas, using experimental validation and numerical simulations. In the MOSFETs with a larger SBD area, unipolar operation in the SBD during diode forward operation was maintained at higher forward currents; as a result, the MOSFETs show lower re-verse recovery and turn-on losses. However, the MOSFETs with a larger SBD area showed higher leakage current through the SBD during short-circuit transients owing to a higher electric field at the SBD, resulting in less short-circuit withstanding capability.