2022 International Conference on Solid State Devices and Materials

講演情報

印刷

Oral Presentation

04: Power / High-speed Devices and Materials

[J-9] GaN Power Devices

2022年9月29日(木) 13:30 〜 15:00 303 (3F)

Session Chair: Toru Sugiyama (Toshiba Device & Strage Corp.), Heiji Watanabe (Osaka Univ.)

13:30 〜 14:00

[J-9-01 (Invited)] Non-destructive Breakdown in GaN/SiC-based Hybrid HEMT

〇Akira Nakajima1, Hirohisa Hirai1, Yoshinao Miura1, Shinsuke Harada1 (1. AIST (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-9-01

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