2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High-speed Devices and Materials

[J-9] GaN Power Devices

Thu. Sep 29, 2022 1:30 PM - 3:00 PM 303 (3F)

Session Chair: Toru Sugiyama (Toshiba Device & Strage Corp.), Heiji Watanabe (Osaka Univ.)

2:15 PM - 2:30 PM

[J-9-03] Theoretical Analysis of Tunneling Current in 4H-SiC Schottky Barrier Diodes Under Reverse-biased Condition Based on Complex Band Structure

〇Yutoku Murakami1, Sachika Nagamizo1, Hajime Tanaka1, Nobuya Mori1 (1. Osaka Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-9-03

The tunneling current in heavily doped 4H-SiC Schottky barrier diodes under reverse-biased condition is calculated based on the complex band structure. Considering the nonparabolicity of the complex band, the experimental result of tunneling current is well reproduced by the calculation.

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