[J-9] GaN Power Devices

[J-9-03] Theoretical Analysis of Tunneling Current in 4H-SiC Schottky Barrier Diodes Under Reverse-biased Condition Based on Complex Band Structure

〇Yutoku Murakami¹, Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.J-9-03

The tunneling current in heavily doped 4H-SiC Schottky barrier diodes under reverse-biased condition is calculated based on the complex band structure. Considering the nonparabolicity of the complex band, the experimental result of tunneling current is well reproduced by the calculation.