[J-9] GaN Power Devices

[J-9-05] Vertical Current Temperature Analysis of GaN-on-Si Epitaxy through Analytical Modelling

〇Florian Rigaud-Minet^1,2, Julien Buckley¹, William Vandendaele¹, Stéphane Bécu¹, Matthew Charles¹, Jérôme Biscarrat¹, Romain Gwoziecki¹, Charlotte Gillot¹, Veronique Sousa¹, Hervé Morel², Dominique Planson² (1. CEA, LETI and Univ. Grenoble Alpes (France), 2. Univ. Lyon, INSA Lyon, Ampère Lab. (France))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-9-05

The current temperature dependence of a 3.9 μm GaN-on-Silicon epitaxy at temperatures ranging from 25 °C to 200 °C and for voltages beneath the plateau limited by the carrier generation in the p-doped substrate is analyzed. Based upon a fit with analytical transport models, the vertical current is reported for the first time to be the superposition of three different transport mechanisms: Recombination limited at low and middle voltages for low temperatures, Ohmic at low and middle voltages for high temperatures and Nearest Neighbor Hopping (NNH) at high voltages. Thanks to their temperature dependences and therefore to their energy, the transports can be related to either point defects clustered around threading dislocations or to interstitial nitrogen.