2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

04: Power / High-speed Devices and Materials

[J-9] GaN Power Devices

2022年9月29日(木) 13:30 〜 15:00 303 (3F)

Session Chair: Toru Sugiyama (Toshiba Device & Strage Corp.), Heiji Watanabe (Osaka Univ.)

14:45 〜 15:00

[J-9-05] Vertical Current Temperature Analysis of GaN-on-Si Epitaxy through Analytical Modelling

〇Florian Rigaud-Minet1,2, Julien Buckley1, William Vandendaele1, Stéphane Bécu1, Matthew Charles1, Jérôme Biscarrat1, Romain Gwoziecki1, Charlotte Gillot1, Veronique Sousa1, Hervé Morel2, Dominique Planson2 (1. CEA, LETI and Univ. Grenoble Alpes (France), 2. Univ. Lyon, INSA Lyon, Ampère Lab. (France))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.J-9-05

The current temperature dependence of a 3.9 μm GaN-on-Silicon epitaxy at temperatures ranging from 25 °C to 200 °C and for voltages beneath the plateau limited by the carrier generation in the p-doped substrate is analyzed. Based upon a fit with analytical transport models, the vertical current is reported for the first time to be the superposition of three different transport mechanisms: Recombination limited at low and middle voltages for low temperatures, Ohmic at low and middle voltages for high temperatures and Nearest Neighbor Hopping (NNH) at high voltages. Thanks to their temperature dependences and therefore to their energy, the transports can be related to either point defects clustered around threading dislocations or to interstitial nitrogen.

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