[K-2] Advanced Sensor Systems

[K-2-02] A 22nm CMOS 1.25V 29pW 0.000013 mm² Supply Voltage Detector Using Stacked 3 Thick-Gate-Oxide PMOSs and Dynamic Leakage Suppression Buffer

〇Yuma Hayashi¹, Kiichi Niitsu¹ (1. Nagoya Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.K-2-02

This paper presents low-standby-power supply volt-age detector with small footprint in 22nm CMOS for energy-autonomous IoT applications. By using stacked 3 thick-gate-oxide PMOSs and dynamic leakage suppres-sion buffer, standby power can be reduced. Test chip has been designed and developed in 22nm bulk CMOS technology. Measured results showed successful func-tionality with 29 pW power under 1.2 V supply voltage.