[K-6] MEMS and Advanced Metallization I

[K-6-02] Evaluating Sintered Silver Die-attach Thermal Cycling Degradation
by Nine Point Cycling Bending Test

〇Keisuke Wakamoto^1,2, Takukazu Otsuka¹, Ken Nakahara¹, Takahiro Namazu² (1. Rohm Co., Ltd (Japan), 2. Kyoto University of Advanced Science (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.K-6-02

This paper investigates the nine-point bending test (NBT) evaluations for verifying the sintered silver (s-Ag) die degradation m during thermal shocked test (TST) that reflects practical operation in silicon carbide (SiC) power module products. SiC chip was s-Ag bonded at 300℃ un-der a pressure of 60MPa with 64Titanium (64Ti) sub-strate. The assembly was flipped to place onto the eight rounded tip shape pin support jigs arranged in an octag-onal position. The other push pin was motion controlled under triangle wave form with the cycle period in 180 sec, force amplitude in 300N under 150℃. The scanning acoustic tomography (SAT) image was utilized for die de-lamination evaluation during NBT. The delamination was occurred after 400 cycles at the corner of chip, then progressed for in-plane direction. The delamination rate transition during NBT showed similar trends with that in TST up to 800 cycles. That is, mechanical stress plays a main role in the die degradation during TST.