2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

03: Interconnect / 3D Integrations / MEMS

[K-6] MEMS and Advanced Metallization I

2022年9月28日(水) 13:30 〜 15:30 304 (3F)

Session Chair: Shigeo Yasuhara (Japan Advanced Chemicals Ltd.), Kenji Shiojima (Univ. of Fukui)

15:00 〜 15:15

[K-6-06] 18nm pitch EUVL Line/Space double-patterning exploration for N3 BEOL

〇Stephane LARIVIERE1, Stefan DECOSTER1, Sara PAOLILLO1, Vincent RENAUD1, Diana TSVETANOVA1, Bart KENENS1, Hanne DE COSTER1, Quoc Toan LE1, Yusuke ONIKI1, Alfonso SEPULVEDA MARQUEZ1, Karen STIERS1, Felix SEIDEL1, Martin O'TOOLE1, Mircea DUSA1, Kurt RONSE1, Chris WILSON1 (1. imec (Belgium))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.K-6-06

At N3, metal interconnect logic Back End of Line (BEoL) wiring could not be Cu metallization anymore as resistance will dramatically increase due to the Critical Dimension (CD) downscaling. Many studies have identi-fied Ruthenium (Ru) as a relevant alternative metal, which, with a suitable hard mask (HM), can be directly patterned at that node in a dry etch scheme (Direct Metal Etch, aka DME). Waiting for 0.55 high-NA EUV single exposure availability, multi patterning schemes circum-vent the challenge of chip scaling down to 18 nm pitch (MP18) gratings.
In this work, we will present the development of a double patterning EUV flow for sub-20 nm L/S (line/Space) where the HM grating output is delivered to etch design-friendly variable metal CD lines with DME.

Abstract password authentication.
Password to download abstracts has been informed in the confirmation mail.

パスワード