2022 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

03: Interconnect / 3D Integrations / MEMS

[K-6] MEMS and Advanced Metallization I

Wed. Sep 28, 2022 1:30 PM - 3:30 PM 304 (3F)

Session Chair: Shigeo Yasuhara (Japan Advanced Chemicals Ltd.), Kenji Shiojima (Univ. of Fukui)

3:15 PM - 3:30 PM

[K-6-07] Demonstrating 1T1R Memory Cell by Heterogeneous Integration of Zinc Oxide Thin-Film Transistor with SiC-based Memristor

〇Ben Daniel Rowlinson1, Omesh Kapur1, Dongkai Guo1, Ruomeng Huang1, C.H. de Groot1, Harold Chong1 (1. University of Southampton (UK))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.K-6-07

Wide-bandgap metal-oxide thin-film transistors are a promising technology for enabling future advances in heterogeneous integration, thanks to the phenomenally low leakage current, high mobility and excellent switching characteristics. In this work, we demonstrate a novel integration of an ultra-low leakage ZnO TFT with a high-endurance SiC memristor to form a single 1T1R (one transistor, one memristor) memory cell with high selectivity, low current leakage below 100 fA, and scalability to larger memory arrays.

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