[K-6] MEMS and Advanced Metallization I

[K-6-07] Demonstrating 1T1R Memory Cell by Heterogeneous Integration of Zinc Oxide Thin-Film Transistor with SiC-based Memristor

〇Ben Daniel Rowlinson¹, Omesh Kapur¹, Dongkai Guo¹, Ruomeng Huang¹, C.H. de Groot¹, Harold Chong¹ (1. University of Southampton (UK))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.K-6-07

Wide-bandgap metal-oxide thin-film transistors are a promising technology for enabling future advances in heterogeneous integration, thanks to the phenomenally low leakage current, high mobility and excellent switching characteristics. In this work, we demonstrate a novel integration of an ultra-low leakage ZnO TFT with a high-endurance SiC memristor to form a single 1T1R (one transistor, one memristor) memory cell with high selectivity, low current leakage below 100 fA, and scalability to larger memory arrays.