2022 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

12: Advanced Circuits / Systems Interacting with Innovative Devices and Materials

[K-7] Advanced Systems with Innovative Devices

2022年9月29日(木) 09:00 〜 10:15 304 (3F)

Session Chair: Daisuke Kanemoto (Osaka Univ.), Yasuhiro Ogasahara (AIST)

09:45 〜 10:00

[K-7-03] Feasibility Study for 32-level cell using Memory with 13.5-V 0.5-um OSFET Monolithically Stacked on 13.5-V 1.6-um CMOSFET

〇Hiroki Inoue1, Shoki Miyata1, Yusuke Komura1, Yuki Okamoto1, Takanori Matsuzaki1, Hidetomo Kobayashi1, Yoshinori Ando1, Hitoshi Kunitake1, Yoshiyuki Kurokawa1, Shunpei Yamazaki1 (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.K-7-03

We found a possibility to achieve a 32-level cell using a 16-level-cell memory test chip in which a 13.5-V 0.5-um crystalline oxide semiconductor field-effect transistor (OSFET) was monolithically stacked on a 13.5-V 1.6-um CMOSFET. The variation in a read 16-level analog voltage, the +/-3 sigma range, was 0.202 V at a maximum. With regard to retention characteristics, 16-level data was retained for three hours at room temperature, and the voltage change was 0.038 V at a maximum. The narrowest difference between distributions was 0.253 V. The maximum +/-3 sigma range was smaller than the narrowest difference between distributions, which shows a possibility that one more piece data is able to be retained between pieces of data.

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