[K-8] Innovative Devices and Systems for Advanced Imaging and Sensing

[K-8-01] Electro-optic imaging system using a CMOS image sensor with a dual-layer on-pixel polarizer

〇Ryoma Okada¹, Kiyotaka Sasagawa¹, Maya Mizuno², Hironari Takehara¹, Makito Haruta¹, Hiroyuki Tashiro^1,3, Jun Ohta¹ (1. Nara Institute of Science and Technology (Japan), 2. National Institute of Information and Communications Technology (Japan), 3. Kyushu Univ. (Japan))

Presentation style: On-site (in-person)

https://doi.org/10.7567/SSDM.2022.K-8-01

In this study, we demonstrate an electro-optic (EO) imaging system using an image sensor with dual-layer on-pixel polarizers composed of metal wire grids. The line and space of the dual-layer polarizer are both set to 0.7 µm. The extinction ratio at a wavelength of 780 nm is 3.49, which is considerably higher than that of a sin-gle-layer polarizer with identical line and space dimen-sions. The system improves signal detection performance by more than seven times in the EO imaging of a high-frequency electric field of 100 MHz.