[K-8] Innovative Devices and Systems for Advanced Imaging and Sensing

[K-8-05] Self-Sensitivity Amplifiable Dual-gate Ion-Sensitive Field-Effect Transistor Based on High-k Engineered Dielectric Layer

〇Yeong-Ung Kim¹, Won-Ju Cho¹ (1. Kwangwoon Univ. (Korea))

Presentation style: Online

https://doi.org/10.7567/SSDM.2022.K-8-05

In this study, we propose a self-sensitivity amplifiable pH sensor platform based on a double gate (DG) ion sensing field effect transistor (ISFET) by applying a high-k engineered dielectric layer. The amplification ca-pacity was ensured through the capacitive coupling effect using the DG structure to overcome the limitations of the conventional ISFET (~59 mV/pH @300K). The imple-mented ISFET exhibited sensitivity far exceeding the Nernst limit depending on the capacitance ratio of the top gate dielectric to the bottom gate dielectric, as well as excellent linearity and stability under exposure to pH buffer solution. In addition, the amount of change ac-cording to pH was maximized by extracting the current change based on the reference voltage. Therefore, the proposed ISFET is expected to be a promising technology that can be utilized as a biosensor platform for detecting micropotential analytes.