Evaluation of Si and Ge Segregation from Si <sub>0.2</sub>Ge <sub>0.8</sub>(111) through Al and Ag Layer

Taiki Sakai

doi:https://doi.org/10.7567/SSDM.2023.A-3-03

Presentation information

Oral Presentation

08: Low Dimensional Devices and Materials

[A-3] Growth and Synthesis: Low Dimensional Devices and Materials

Thu. Sep 7, 2023 9:00 AM - 10:00 AM Room A (131+132, Bldg. 1)

Session Chairs: Masafumi Jo (RIKEN), Satoshi Hiura (Hokkaido Univ.)

9:45 AM - 10:00 AM

[A-3-03] Evaluation of Si and Ge Segregation from Si _0.2Ge _0.8(111) through Al and Ag Layer

^○Taiki Sakai¹, Akio Ohta², Noriyuki Taoka³, Junji Yuhara¹, Katsunori Makihara¹, Yuji Yamamoto⁴, Wei-chen Wen⁴, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Fukuoka Univ. (Japan), 3. Aichi Inst. of Tech. (Japan), 4. IHP (Germany))

https://doi.org/10.7567/SSDM.2023.A-3-03

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Presentation information

[A-3] Growth and Synthesis: Low Dimensional Devices and Materials

[A-3-03] Evaluation of Si and Ge Segregation from Si 0.2Ge 0.8(111) through Al and Ag Layer

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[A-3-03] Evaluation of Si and Ge Segregation from Si _0.2Ge _0.8(111) through Al and Ag Layer