First Demonstration of Bi-directional Sub-50 mV/dec MoS 2-Hf 0.5Zr 0.5O 2 Ferroelectric FET with Record High Memory Window Efficiency Exceeding the Theoretical Limit and High-Precision Analog Synapse

HENG XIANG

doi:https://doi.org/10.7567/SSDM.2023.A-6-02

11:15 AM - 11:30 AM

[A-6-02] First Demonstration of Bi-directional Sub-50 mV/dec MoS ₂-Hf _0.5Zr _0.5O ₂ Ferroelectric FET with Record High Memory Window Efficiency Exceeding the Theoretical Limit and High-Precision Analog Synapse

^○HENG XIANG¹, Yu-Chieh Chien¹, Lingqi Li¹, Haofei Zheng¹, Sifan Li¹, Yufei Shi¹, Kah-Wee Ang^1,2 (1. National Univ. of Singapore (Singapore), 2. Inst. of Materials Res. and Eng. (Singapore))

https://doi.org/10.7567/SSDM.2023.A-6-02

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Presentation information

[A-6] Device Application II: Low Dimensional Devices and Materials

[A-6-02] First Demonstration of Bi-directional Sub-50 mV/dec MoS ₂-Hf _0.5Zr _0.5O ₂ Ferroelectric FET with Record High Memory Window Efficiency Exceeding the Theoretical Limit and High-Precision Analog Synapse

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Presentation information

[A-6] Device Application II: Low Dimensional Devices and Materials

[A-6-02] First Demonstration of Bi-directional Sub-50 mV/dec MoS 2-Hf 0.5Zr 0.5O 2 Ferroelectric FET with Record High Memory Window Efficiency Exceeding the Theoretical Limit and High-Precision Analog Synapse

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[A-6-02] First Demonstration of Bi-directional Sub-50 mV/dec MoS ₂-Hf _0.5Zr _0.5O ₂ Ferroelectric FET with Record High Memory Window Efficiency Exceeding the Theoretical Limit and High-Precision Analog Synapse